HGTG30N60C3D

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.5 V
Power Dissipation : 208 W
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Continuous Collector Current at 25 C : 63 A


Features:

• 63A, 600V at T_C= 25
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode




Pinout






Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 63 A
Collector Current Continuous At T_C= 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C110 30 A
Average Diode Forward Current at 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG) 25 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 252 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J= 150. . . . . . . . . . . . . . . . . . . . . . .SSOA 60A at 600V
Power Dissipation Total at T_C= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Derating T_C> 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .. T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Short Circuit Withstand Time (Note 2) at V_GE= 15V . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 4µs
Short Circuit Withstand Time (Note 2) at V_GE= 10V . . . . . . . . . . . . . . . . . . . . . . . . t_SC 15µs

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
HGTG30N60C3D	Full Production	RoHS Compliant	$7.16	TO-247	3	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: G30N60C3D

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG30N60C3D is available. Click here for more information .

Description

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25and 150. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.

The HGTG30N60C3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

Parameters:

Technical/Catalog Information	HGTG30N60C3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	63A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Power - Max	208W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG30N60C3D HGTG30N60C3D