HGTG34N100E2

Features: • 34A, 1000V• Latch Free Operation• Typical Fall Time - 710ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....BVCES 1000 VCollector-Gate Voltage, RGE =1MW ....

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HGTG34N100E2 Picture
SeekIC No. : 004362165 Detail

HGTG34N100E2: Features: • 34A, 1000V• Latch Free Operation• Typical Fall Time - 710ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . ...

floor Price/Ceiling Price

Part Number:
HGTG34N100E2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• 34A, 1000V
• Latch Free Operation
• Typical Fall Time - 710ns
• High Input Impedance
• Low Conduction Loss



Pinout

  Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . ..BVCES 1000 V
Collector-Gate Voltage, RGE =1MW . . . . . . . . . . . . . . . . . . . . . .. .  . .VCGR 1000 V
Collector Current Continuous at TC = +25. . . . . . . . . . . . . . . . . . .  . . IC25 55 A
at VGE = 15V, at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 34 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 200 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . .  . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. VGEM ±30 V
Switching Safe Operating Area at TJ = +150 . . . . . . . .SSOA 200A at 0.8 BVCES
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/
Operating and Storage Junction Temperature Range . . .TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . tSC 3 s
at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 10 s



Description

The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG34N100E2 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The much lower on-state voltage drop varies only moderately between +25 and +150.The HGTG34N100E2 IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.


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