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HGTP10N50E1D

Features: • 10A, 400V and 500V• VCE(ON): 2.5V Max.• TFALL: 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• Anti-Parallel DiodeApplication• Power Supplies• Motor Drives• Protective CircuitsPinoutSpecification...

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SeekIC No. : 004362187 Detail

HGTP10N50E1D: Features: • 10A, 400V and 500V• VCE(ON): 2.5V Max.• TFALL: 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input Impedance• Anti-Parallel Diod...

HGTP10N50E1D Data Sheet

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Part Number:
HGTP10N50E1D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode


Application

• Power Supplies
• Motor Drives
• Protective Circuits


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  .VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .     VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .  .  .  .  .  .  .   VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .   IC25 17.5 17.5 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . .   .  .  .  .  .  .   IC90 10 10
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .   PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . TJ, TSTG -55 to +150 -55 to +150


Description

The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly from low power integrated circuits.




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