HGTP14N41G3VL

                                                                                                                               HGT1S14N41G3VLS,
                                                                                                                                 HGTP14N41G3VL       UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CER        430                      V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES         445                      V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_ECS          24                       V
Collector Current Continuous at V_GE = 5V, T_C = 25 . . . . . . . . . . . . . . . . . . .I_C25             25                       A
                                               at V_GE = 5V, T_C = 110 . . . . . . . . . . . . . . . . . .I_C110           18                       A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM         ±10                      V
Inductive Switching Current at L = 3 mH, T_C = 25 . . . . . . . . . . . . . . . . . . . . I_SCIS           15                       A
                                             at L = 3 mH, T_C = 150. . . . . . . . . . . . . . . . . . . .I_SCIS         11.5                      A
Collector to Emitter Avalanche Energy at L = 3 mH, T_C = 25 . . . . . . . . . . . . .E_AS            340                      mJ
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D             136                      W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                 0.91                   W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG      -55 to 175                
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J          -55 to 175                
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . E_SD            5                         kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . E_SD            2                         kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T_L             300                      
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_PKG         260                       

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 

NOTE:
1. May be exceeded if I_GEM is limited to 10mA.