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HGTP1N120BND
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MFG:N/A Package Cooled:N/A D/C:09+

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Part Number: HGTP1N120BND

MFG: N/A

Package Cooled: N/A

D/C: 09+

Description: The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are newme...

HGTP1N120BND General Description

The HGTP1N120BND and the HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49314.

HGTP1N120BND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C255.3 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 2.7 A
Average Rectified Forward Current at T_C = 148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . . . .SSOA 6A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 60 W
Power Dissipation Derating T_C> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . .T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . .t_SC 13 µs

HGTP1N120BND Features

• 5.3A, 1200V, T_C= 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at T_J= 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Mode
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP1N120BND Connection Diagram

HGTP1N120BND datasheet

HGTP1N120BND
PDF/DataSheet Download

Datasheet: HGTP1N120BND
File Size: 77574 KB
Manufacturer: INTERSIL [Intersil Corporation]
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