HGTP1N120CND suppliers, HGTP1N120CND price trend, HGTP1N120CND PDF download, circuit diagram from SeekIC

Position: Home > Datasheet list > HGT Series > Index H > HGTP1N120CND

Table of contents:
HGTP1N120CND
Suppliers
DataSheet
General Description

Purchase HGTP1N120CND, In-stock HGTP1N120CND From SeekIC.

MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+

HGT Series Datasheet download

Five Points

Part Number: HGTP1N120CND

MFG: FAIRCHILD

Package Cooled: DIP/SOP

D/C: 08+

Description: The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members...

HGTP1N120CND General Description

The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056).

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49315.

HGTP1N120CND Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES1200 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 6.2 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 3.2 A
Average Rectified Forward Current at T_C = 148 . . . . . . . . . . . . . . . . . . . . . . . . . I_F(AV) 4 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 6 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . . . . SSOA 6A at 1200V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 60 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 8 µs
Short Circuit Withstand Time (Note 2) at V_GE= 13V. . . . . . . . . . . . . . . . . . . . . . . . . . t_SC 11 µs

HGTP1N120CND Features

• 6.2A, 1200V, T_C = 25
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 200µJ at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, "Guidelines for Soldering Surface Mount
Components to PC Boards"

HGTP1N120CND Connection Diagram

HGTP1N120CND datasheet

HGTP1N120CND
PDF/DataSheet Download

Datasheet: HGTP1N120CND
File Size: 82102 KB
Manufacturer: INTERSIL [Intersil Corporation]
Click here to Download

·HGT1N30N60A4D
FAIRCHILD [Fairchild Semiconductor]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
147560 KB
·HGT1N40N60A4
FAIRCHILD [Fairchild Semiconductor]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
155981 KB
·HGT1N40N60A4D
FAIRCHILD [Fairchild Semiconductor]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
155981 KB
·HGT1S10N120BNS
FAIRCHILD [Fairchild Semiconductor]
35A, 1200V, NPT Series N-Channel IGBT
83631 KB
·HGT1S11N120CNS
INTERSIL [Intersil Corporation]
43A, 1200V, NPT Series N-Channel IGBT
141382 KB
·HGT1S12N60A4DS
FAIRCHILD [Fairchild Semiconductor]
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
404005 KB
·HGT1S12N60A4S
INTERSIL [Intersil Corporation]
600V, SMPS Series N-Channel IGBT
117801 KB
·HGT1S12N60A4S9A
FAIRCHILD [Fairchild Semiconductor]
600V, SMPS Series N-Channel IGBTs
235127 KB

Related Part Number

HGTP1N120CND Relative Products

HGTP1N120CN
The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. TheseHGTD1N120CNS, and the HGTP1N120...
HGTP1N120BND
The HGTP1N120BND and HGT1S1N120BNDS are Non-Punch Through (NPT) IGBT designs. They are newmembers of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedanc...
HGTP1N120BN
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. ThisHGTD1N120BNS and HGTP1N120BN have the...
HGTP15N50E1
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switchi...
HGTP15N50C1
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switchi...
HGTP15N40E1
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1, HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switchi...

Hotspot Suppliers Product

Product List

LM431AC
Price: 1-5 USD
LM431AC - Adjustable precision shunt regulators - National Semiconductor
MC33269DR2-5.0
Price: 0.35-0.45 USD
low dropout, medium current, fixed and adjustable, positive voltage regulator, SOP8, 400V, 800 mA,...
XC6VLX130T-1FFG1156C
Price: 450-500 USD
FPGA, VIRTEX 6, 128K, 1156FFGBGA, –0.5V to 1.1V, Xilinx, Inc
PIC16F876-04/SP
Price: 3-3.15 USD
DIP-28PIN, 8-Bit, CMOS FLASH Microcontroller, -0.3 to +7.5 V, High performance RISC CPU
pka2323
Price: 0.01-0.02 USD
25–40 W DC/DC Power Module, IGBT, –0.5 to 36Vdc, 1.3 Ws, Single, dual and triple output
TLC27L2CDR
Price: 0.28-0.31 USD
–0.3 V to VDD, dual operational amplifier, SOP, 18 V, Small-Outline Package
BTS7700G
Price: 1.5-2 USD
BTS7700G - TRILITH IC - Infineon Technologies AG DIP
ELANSC400-66AI
Price: 1-100 USD
microcontroller, BGA, –0.5 V to +4.6 V, ELANSC400-66AI, Advanced Micro Devices
G6RL-1
Price: 4-5 USD
power relay, Low-profile, 2,500 VA, 10 to 55 to 10 Hz, RoHS Compliant
TIP147
Price: 0.42-0.53 USD
silicon Epitaxial-Base, NPN power transistor, 100 V, 125 W, 20 A, monolithic darlington configurat...
MC68332ACF16
Price: 1-2 USD
32-bit microcontroller, QFP, 20.97 MHz, 4.5 V to 5.5 V, RoHS Non-Compliant
LQW15AN6N8G
Price: 0.09-0.13 USD
250MHz, High Frequency Winding Type, Chip Coil

Map list: A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9 All