MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coi...
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
|
Parameters |
Symbol | VALUE | Units |
| Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. | BVCER | 395 | V |
| Emitter-Collector Bkdn Voltage At 10mA | BVECS | 28 | V |
| Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7 |
IC25 | 37.7 | A |
| At VGE = 5.0V, TC = +100oC | IC100 | 26 | A |
| Gate-Emitter-Voltage (Note) | VGES | ±10 | V |
| Inductive Switching Current At L = 2.3mH, TC = +25o0C | ISCIS | 21 | A |
| At L = 2.3mH, TC = +150oC | ISCIS | 16 | A |
| Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC | EAS | 500 | mJ |
| Power Dissipation Total At TC = +25oC | PD | 150 | W |
| Power Dissipation Derating TC > +25oC | 1.0 | W/oC | |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -40 to +175 | oC |
| Maximum Lead Temperature for Soldering | T | 260 | oC |
| Electrostatic Voltage at 100pF, 1500 | ESD | 6 | KV |
HGTP20N36G3VL
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