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HGTP20N36G3VL

Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175oC• Ignition Energy CapableSpecifications Parameters Symbol VALUE Units Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. BVCER 395 V Emitter-Collector Bkdn Vol...

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SeekIC No. : 004362203 Detail

HGTP20N36G3VL: Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175oC• Ignition Energy CapableSpecifications Parameters Symbol VALUE Uni...

HGTP20N36G3VL Data Sheet

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Part Number:
HGTP20N36G3VL
Supply Ability:
5000

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Product Details

Description



Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
• Ignition Energy Capable


Specifications

Parameters

 Symbol VALUE Units
Collector-Emitter Bkdn Voltage At 10mA, RGE = 1k. BVCER 395 V
Emitter-Collector Bkdn Voltage At 10mA BVECS 28 V
Collector Current Continuous At VGE = 5.0V, TC = +25oC, Figure 7

 IC25 37.7 A
At VGE = 5.0V, TC = +100oC IC100 26 A
Gate-Emitter-Voltage (Note) VGES ±10 V
Inductive Switching Current At L = 2.3mH, TC = +25o0C ISCIS 21 A
At L = 2.3mH, TC = +150oC ISCIS 16 A
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25oC EAS 500 mJ
Power Dissipation Total At TC = +25oC PD 150 W
Power Dissipation Derating TC > +25oC   1.0 W/oC
Operating and Storage Junction Temperature Range TJ, TSTG -40 to +175 oC
Maximum Lead Temperature for Soldering T 260 oC
Electrostatic Voltage at 100pF, 1500 ESD 6 KV
NOTE: May be exceeded if IGEM is limited to 10mA.


Description

This HGTP20N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP20N36G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.




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