HGTP20N60A4

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-220-3
Continuous Collector Current at 25 C : 70 A
Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 290 W


Features:

• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T_J = 125
• Low Conduction Loss
• Temperature Compensating SABER™ Model
  www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards


Pinout




Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES 600 V
Collector Current Continuous At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 70 A
Collector Current Continuous At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  I_CM 280 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM ±30 V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . . . . . . . .SSOA 100A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D 290 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . T_J, T_STG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  T_PKG 260 


Description

The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

This HGTG20N60A4 and HGTP20N60A4 IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49339.

Parameters:

Technical/Catalog Information	HGTP20N60A4
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Power - Max	290W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTP20N60A4 HGTP20N60A4