MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
MFG: FAIRCHILD
Package Cooled: DIP/SOP
D/C: 08+
Description: The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of ...
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
| Collector to Emitter Voltage ................ . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . ........................... IC110 Collector Current Pulsed (Note 1) . . . . . ........ICM Gate to Emitter Voltage Continuous. . . . . . . .. VGES Gate to Emitter Voltage Pulsed . . ............... VGEM Switching Safe Operating Area at TJ = 150oC (Figur.SSOA Power Dissipation Total at TC = 25oC . ......... . . PD Power Dissipation Derating TC > . . . . . . .. . . 25oC Operating and Storage Junction Temperature RangeTJ,TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. tSC |
1200 12 5.6 20 ±20 ±30 12A at 1200V 104 0.83 -55 to 150 300 260 8 15 |
V A A A V V W W/o C o C o C o C µs µs |
HGTP2N120BND
PDF/DataSheet Download
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipola...
This HGTP20N60C3R family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGTP20N60C3R devices demonstrate RUGGED performance capability when subjected...
This HGTP20N60C3 family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP20N60C3 have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The ...
The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction...
The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor....
This HGTP20N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGTP20N36G3VLinclude an active voltage clamp between the collector and the gate w...
Price: 1.3-2.4 USD
ISR, Module, 3A
Price: 1.05-1.2 USD
4 Megabit (512 K x 8-Bit), CMOS 5.0 Volt-only, Uniform Sector Flash Memory, High performance, PLCC...
Price: 0.025-0.035 USD
1.0W Power Dissipation, surface mount zener diode, LL-41, 3.9V - 100V, Zener Voltages, 5% Standar...
Price: 0.47-0.49 USD
2.0 Amp, Output Current IGBT Gate, Drive Optocoupler, DIP8, 25 mA, 100mW, Surface Mount
Price: 6.5-8 USD
phase control thyrister, MODULE, Peak Forward Gate Voltage VFGH: 10V
Price: 1-30 USD
data format controller, PLCC, 32MHz, AM80C188-20, AMD
Price: 0.01-100 USD
High-Performance, Enhanced Flash Microcontroller, 16K, 40MHZ, 44TQFP, 4.2 V ~ 5.5 V
Price: 1-10 USD
OM8373PSN3A1586, DIP, Philips Electronics India Limited
Price: 2-2.8 USD
IC USB MUX Interface , 20WLP, MAX14526EEWP+T, Maxim Integrated Products
Price: 4-5 USD
Single-Chip Microcontroller, 16BIT, 64KB, MQFP-80-1, -0.5 to 6.5 V, -10 to 10 mA, 1.5 W
Price: 0.1-0.4 USD
Audio Amplifier, 8DIP, Class AB, 4.5 V ~ 18 V, 1-Channel, RoHS Compliant, 2W
Price: 0.78-1 USD
relay, DIP, 60 W, 3 A, High sensitivity, High breakdown voltage, Sealed construction, 2 Form C con...
