HGTP3N60A4

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.05 V
Continuous Collector Current at 25 C : 17 A
Power Dissipation : 70 W


Features:

<sup><sub>• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . .  70ns at TJ = 125oC
•12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"</sub></sup>

Specifications

_{Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified}

ALL TYPES			UNITS
Collector to Emitter Voltage	BVCES	600	V
Collector Current Continuous
At TC = 25oC	IC25	17	A
At TC = 110oC .	IC110	8	A
Collector Current Pulsed (Note 1)	ICM	40	A
Gate to Emitter Voltage Continuous	VGES	± 20	V
Gate to Emitter Voltage Pulsed	VGEM	± 30	V
Switching Safe Operating Area at TJ = 150oC, Figure 2	SSOA	15A at600V
Single Pulse Avalanche Energy at TC = 25oC.	EAS	12mJ at 3A
Power Dissipation Total at TC = 25oC	PD	70	W
Power Dissipation Derating TC > 25oC		0.56	W/oC
Operating and Storage Junction Temperature Range	TJ, TSTG	-55 to 150	oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s	TL	300	oC
Package Body for 10s, See Tech Brief 334	TPKG	260	oC

Parameters:

Technical/Catalog Information	HGTP3N60A4
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	17A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 3A
Power - Max	70W
Mounting Type	Through Hole
Package / Case	TO-220AB
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTP3N60A4 HGTP3N60A4