Purchase HGTP3N60A4, In-stock HGTP3N60A4 From SeekIC.
MFG:FAIRCHILD Package Cooled:DIP/SOP D/C:08+
- Table of contents:
HGTP3N60A4
-
Suppliers
DataSheet
General Description
HGTP3N60A4 Maximum Ratings
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
|
ALL TYPES |
UNITS | ||
| Collector to Emitter Voltage |
BVCES |
600 |
V |
| Collector Current Continuous | |||
| At TC = 25oC |
IC25 |
17 |
A |
| At TC = 110oC . |
IC110 |
8 |
A |
| Collector Current Pulsed (Note 1) |
ICM |
40 |
A |
| Gate to Emitter Voltage Continuous |
VGES |
± 20 |
V |
| Gate to Emitter Voltage Pulsed |
VGEM |
± 30 |
V |
| Switching Safe Operating Area at TJ = 150oC, Figure 2 |
SSOA |
15A at600V |
|
| Single Pulse Avalanche Energy at TC = 25oC. |
EAS |
12mJ at 3A |
|
| Power Dissipation Total at TC = 25oC |
PD |
70 |
W |
| Power Dissipation Derating TC > 25oC |
0.56 |
W/oC | |
| Operating and Storage Junction Temperature Range |
TJ, TSTG |
-55 to 150 |
oC |
| Maximum Lead Temperature for Soldering | |||
| Leads at 0.063in (1.6mm) from Case for 10s |
TL |
300 |
oC |
| Package Body for 10s, See Tech Brief 334 |
TPKG |
260 |
oC |
HGTP3N60A4 Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
•12mJ EAS Capability
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
HGTP3N60A4
PDF/DataSheet Download
- Datasheet: HGTP3N60A4
- File Size: 159970 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB
- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB
- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB
- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB
- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB
- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB
HGTP3N60A4 Relative Products
HGTP2N120CND
The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs.HGTP2N120CND and HGT1S2N120CNDS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device ...
HGTP2N120CN
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipola...
HGTP2N120BND
The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs.HGTP2N120BND and HGT1S2N120BNDS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device ...
HGTP2N120BN
The HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are Non-Punch Through (NPT) IGBT designs. HGTP2N120BN, HGTD2N120BNS, and HGT1S2N120BNS are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipola...
HGTP20N60C3R
This HGTP20N60C3R family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These HGTP20N60C3R devices demonstrate RUGGED performance capability when subjected...
HGTP20N60C3
This HGTP20N60C3 family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP20N60C3 have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The ...
Hotspot Suppliers Product
RI2512L201JT
Price: 0.001-1 USD
chip resistor, RI2512L201JT, Supertex
LM2678S-5.0
Price: 2.8-3 USD
regulator, TO-263, -0.1V to 6V
SG6841SZ
Price: 0.47-0.63 USD
High-integrated Green-mode, PWM Controller, SOP8, Green-mode PWM, Low operation current 3mA, Progr...
37215000431
Price: 0.09-0.2 USD
TR5, time-lag-type, 250V rated fuse, 40mA to 6.3A, lead free, low internal resistance, shock safe ...
PIC12F675-I/P
Price: 0.39-0.8 USD
DIP, Flash-Based, 8-Bit, CMOS Microcontrollers, Microchip Technology, -0.3V to +6.5V
YGV618-F
Price: 4-4.5 USD
advanved video display processor, QFP, -0.5V to +7.0V, -20mA to +20mA
TMS320VC5416ZGU160
Price: 12-15 USD
Digital Signal Processor, BGA
IRF130
Price: 4-5 USD
14A, 100V, 0.160 Ohm, N-Channel Power MOSFET, 3TO-204AA, Nanosecond Switching Speeds
ADS774JP
Price: 10-12 USD
analog-to-digital converter, DIP, 28-pin SOICs, a single +5V supply
MC33390D
Price: 0.2-0.5 USD
serial transceiver, 8-SOIC, 9 V ~ 16 V, RoHS Non-Compliant, 10.4 kbps
2SC1579
Price: 3.5-4 USD
Silicon NPN Power Transistor, TO-3, 500 V, 15 A, 30 A, Sanken
S5935QF
Price: 68-70 USD
PCI controller, Bus Master, QFP, 33 MHz
