MFG:F Package Cooled:TO-220 D/C:09+
MFG: F
Package Cooled: TO-220
D/C: 09+
Description: The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are n...
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308.
The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.
|
SYMBOL |
PARAMETERS |
RATING |
UNITS |
| B VCES I C25 I C110 ICM V GES V GEM S SOA P D T STG TL Tpkg t SC tSC |
Collector to Emitter Voltage Collector Current Continuous At TC = 25oC At TC = 110oC Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC (Figure Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s Package Body for 10s, see Tech Brief 334 Short Circuit Withstand Time (Note 2) at VGE = 15V. Short Circuit Withstand Time (Note 2) at VGE = 12V. |
1200 21 10 40 ±20 ±30 30A at 1200V 167 1.33 -55 to 150 300 260 8 15 |
V A A A V V W W/o C o C o C o C µs µs |
HGTP5N120BND
PDF/DataSheet Download
The HGTP5N120BN and HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance...
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS devices have the high input impedance of a MOSFET...
The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTD3N60C3S and the HGTP3N60C3 devices have the high input impedance of a MOSFET and the low on-state conduc...
IGBT N-CH SMPS 600V 17A TO220AB
Price: 0.1-0.5 USD
CMOS programmable, parallel interface unit, DIP, 500mW, -0.5V to +7.0V
Price: 0.1-0.15 USD
Transil diode, DO-15, UL recognized, low clamping factor, 400W, fast response time
Price: 20-40 USD
high-density, high-performance PLD, PLCC84, –2.0 to 7.0 V, PCI-compliant, 5.0-V in-system programm...
Price: 3.5-4 USD
aluminum electrolytic capacitor, Snap-in Terminal Type, 2200μF, 200V, 20% SNAP, Through Hole
Price: 12.7-15.5 USD
16-bit MCS 96 microcontroller, QFP100, 1.5 W, –0.5 V to +7.0 V, 50 MHz Operation, 32 I/O Port Pins
Price: 0.15-1 USD
Voltage Regulator, TO263, -42 to 42 V
Price: 1.1-1.5 USD
boost converter, QFN, -0.3 to 20 V, rated integrated switch FET, Built-in Soft Start, PWM Brightne...
Price: 0.1-0.6 USD
Darlington transistor, SOP, 50V
Price: 30-68 USD
power diode module, 600V, 100A, electrically isolated, cost-effective feature, Fuji Electric
Price: 1-10 USD
81003002, QFP80, Central Semiconductor Corp
Price: 386-390 USD
Programmable Controller, moudle, 100 kHz, powerful position control
Price: 0.1-0.1 USD
Communications Controller, PGA, 32-Bit, Background Debug Mode, Up to 32-Bit Data Bus
