HGTP7N60C3D General Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25.and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
HGTP7N60C3D Maximum Ratings
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 A
At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 A
Average Diode Forward Current at 110o . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 8 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 56 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150, Figure 14 . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 W
Power Dissipation Derating TC > 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . .tSC 1 ms
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . .tSC 8 ms
HGTP7N60C3D Features
• 14A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
HGTP7N60C3D Connection Diagram
- ·HGT1N30N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 147560 KB
- ·HGT1N40N60A4
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1N40N60A4D
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 155981 KB
- ·HGT1S10N120BNS
- FAIRCHILD [Fairchild Semiconductor]
- 35A, 1200V, NPT Series N-Channel IGBT
- 83631 KB
- ·HGT1S11N120CNS
- INTERSIL [Intersil Corporation]
- 43A, 1200V, NPT Series N-Channel IGBT
- 141382 KB
- ·HGT1S12N60A4DS
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
- 404005 KB
- ·HGT1S12N60A4S
- INTERSIL [Intersil Corporation]
- 600V, SMPS Series N-Channel IGBT
- 117801 KB
- ·HGT1S12N60A4S9A
- FAIRCHILD [Fairchild Semiconductor]
- 600V, SMPS Series N-Channel IGBTs
- 235127 KB
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