HIP0061

Features:

• Three 3.5A Power MOS N-Channel Transistors
• Output Voltage to 60V
• rDS(ON) . . . . . 0.225 Max Per Transistor at VGS = 10V
• Pulsed Current . . . . . . . . . . . . . . . .10A Each Transistor
• Avalanche Energy . . . . . . . . . . 100mJ Each Transistor
• Grounded Tab Eliminates Heat Sink Isolation


Application

• Automotive
• Appliance
• Industrial Control
• Robotics
• Relay, Solenoid, Lamp Drivers


Pinout




Specifications

Drain to Source Voltage, V_DS
(Over Operating Junction and Case Temperature Range) . . .  .. 60V
Drain to Gate Voltage, V_DGR . . . . . . . . . . . . . . . . . . . . . . . . .  . . 60V
Gate to Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . .-15, +20V
Pulsed Drain Current, IDM, Each Output,
All Outputs on at V_GS = 10V (Notes 1, 2) . . . . . . . . . . . . . .  . . . 10A
Continuous Source to Drain Diode Current, ISD
at V_GS = 10V (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 3.5A
Continuous Drain Current, IDS, Each Output,
All Outputs on at V_GS = 10V (Note 2) . . . . . . . . . . . . . . . . . . . . 3.5A
Single Pulse Avalanche Energy, E_AS (Note 3) . . . . . . . . . .  . . 100mJ


Description

The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transistors connected in a common source configuration. The advanced Harris PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

The HIP0061 is designed to integrate three power devices in one chip thus providing board layout area and heat sink savings for applications such as Motor Controls, Lamps, Solenoids and Resistive Loads.