HLX6228

Features:

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Low Power Process (Leff = 0.55 µm)
• Total Dose Hardness through 1x106 rad(Si)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s
• Dose Rate Survivability through 1x1011 rad(Si)/s
• Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit
• No Latchup

OTHER

• Read/Write Cycle Times
         32 ns (-55 to 125°C)
• Typical Operating Power <9 mW/MHz
• JEDEC Standard Low Voltage CMOS Compatible I/O
• Single 3.3 V ± 0.3 V Power Supply
• Asynchronous Operation
• Packaging Options
         32-Lead CFP (0.820 in. x 0.600 in.)
         40-Lead CFP (0.775 in. x 0.710 in.)


Pinout




Specifications

Symbol	Parameter		Rating		Units
			Min	Max
VDD	Supply Voltage Range (2)		-0.5	6.0	V
VPIN	Voltage on Any Pin (2)		-0.5	VDD+0.5	V
TSTORE	Storage Temperature (Zero Bias)		-65	150
TSOLDER	Soldering Temperature (5 Seconds)			270
PD	Maximum Power Dissipation (3)			2	W
IOUT	DC or Average Output Current			25	mA
VPROT	ESD Input Protection Voltage (4)		2000		V
JC	Thermal Resistance (Jct-to-Case)	32 FP		2	/W
		40 FP		2
TJ	Junction Temperature			175

Description

The HLX6228 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. HLX6228 is fabricated with Honeywell's radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments. The RAM in HLX6228 operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. The RAM is compatible with JEDEC standard low voltage CMOS I/O. Power consumption is typically less than 9 mW/MHz in operation, and less than 2 mW when deselected. The RAM read operation is fully asynchronous, with an associated typical access time of 32 ns at 3.3 V.

Honeywell's enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV low power process is a SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.7 µm (0.55 µm effective gate length-Leff). Additional features include tungsten via plugs, Honeywell's proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell in HLX6228 is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.