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Part Number: HM-6518
Description: The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circui...
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HM-6518
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General Description
HM-6518 General Description
The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.
On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays.
The HM-6518/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.
HM-6518 Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Input, Output or I/O Voltage . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
HM-6518 Features
• This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50mW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50mW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 180ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 2 TTL Loads
• High Noise Immunity
• On-Chip Address Register
• Two-Chip Selects for Easy Array Expansion
• Three-State Output
HM-6518 Connection Diagram
HM-6518
PDF/DataSheet Download
- Datasheet: HM-6518
- File Size: 226296 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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- ·HM-6501B
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- ·HM-6504
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- ·HM-6504/883
- INTERSIL [Intersil Corporation]
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HM-6518 Relative Products
HM-65162_883
The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit...
HM-65162
The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pin DIP, and 32 pad 8-bit wid...
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HM-6514
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.On-chip latches are provided for addresses allowing efficient...
HM-6508
The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.On chip latches are provided for address allowing effi...
HM-6504
The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.On-chip latches are provided for addresses, data input and data...
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