Purchase HM5264405F-75, In-stock HM5264405F-75 From SeekIC.
Part Number: HM5264405F-75
Description: The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word ´ 16-bit ´ 4 bank. The...
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HM5264405F-75
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DataSheet
General Description
HM5264405F-75 General Description
The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word ´ 16-bit ´ 4 bank. The Hitachi HM5264805F is a 64-Mbit SDRAM organized as 2097152-word ´ 8-bit ´ 4 bank. The Hitachi HM5264405F is a 64-Mbit SDRAM organized as 4194304-word ´ 4-bit ´ 4 bank. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
HM5264405F-75 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
Note |
| Voltage on any pin relative to VSS |
VT |
0.5 to VCC + 0.5 ( 4.6 (max)) |
V |
1 |
| Supply voltage relative to VSS |
VCC |
0.5 to +4.6 |
V |
1 |
| Short circuit output current |
Iout |
50 |
mA |
|
| Power dissipation |
PT |
1.0 |
W |
|
| Operating temperature |
Topr |
0 to +70 |
C |
|
| Storage temperature |
Tstg |
55 to +125 |
C |
Note: 1. Respect to VSS .
HM5264405F-75 Features
` 3.3 V power supply
` Clock frequency: 133 MHz/100 MHz (max)
` LVTTL interface
` Single pulsed RAS
` 4 banks can operate simultaneously and independently
` Burst read/write operation and burst read/single write operation capability
` Programmable burst length: 1/2/4/8/full page
` 2 variations of burst sequence
- Sequential (BL = 1/2/4/8/full page)
- Interleave (BL = 1/2/4/8)
` Programmable CAS latency: 2/3
` Byte control by DQM:DQM (HM5264805F/HM5264405F) DQMU/DQML (HM5264165F)
` Refresh cycles: 4096 refresh cycles/64 ms
` 2 variations of refresh
- Auto refresh
- Self refresh
` Full page burst length capability
- Sequential burst
- Burst stop capability
` Clock frequency: 133 MHz/100 MHz (max)
` LVTTL interface
` Single pulsed RAS
` 4 banks can operate simultaneously and independently
` Burst read/write operation and burst read/single write operation capability
` Programmable burst length: 1/2/4/8/full page
` 2 variations of burst sequence
- Sequential (BL = 1/2/4/8/full page)
- Interleave (BL = 1/2/4/8)
` Programmable CAS latency: 2/3
` Byte control by DQM:DQM (HM5264805F/HM5264405F) DQMU/DQML (HM5264165F)
` Refresh cycles: 4096 refresh cycles/64 ms
` 2 variations of refresh
- Auto refresh
- Self refresh
` Full page burst length capability
- Sequential burst
- Burst stop capability
HM5264405F-75 Connection Diagram
HM50-3R9MLF
PDF/DataSheet Download
- Datasheet: HM50-3R9MLF
- File Size: 259167 KB
- Manufacturer: BITECH [Bi technologies]
- Click here to Download
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HM5264405F-75 Relative Products
HM5264405
All inputs and outputs are reffered to the rising edge of the clock input. The HM5264165 Series, HM5264805 Series, HM5264405 Series are offered in 4 banks for improved performance.
HM5264165FTT-A60
The HM5264165FTT-A60 is one member of the HM5264165F family which is designed as the 64-Mbit SDRAM. Features of this device are:(1)3.3 V power supply;(2)3.3 V power supply;(3)LVTTL interface;(4)Single pulsed RAS;(5)4 banks can operate simultaneously and inde...
HM5264165F
The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word · 16-bit · 4 bank. The Hitachi HM5264805F is a 64-Mbit SDRAM organized as 2097152-word · 8-bit · 4 bank. The Hitachi HM5264405F is a 64-Mbit SDRAM organized as 4194304-word · 4-bit · 4 bank....
HM5264165
All inputs and outputs are reffered to the rising edge of the clock input. The HM5264165 Series, HM5264805 Series, HM5264405 Series are offered in 4 banks for improved performance.
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The HM5259165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank. It is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank.It is a 512-MbitSDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the r...
HM5259805B-75
The HM5259165B is a 512-Mbit SDRAM organized as 8388608-word × 16-bit × 4 bank.It is a 512-Mbit SDRAM organized as 16777216-word × 8-bit × 4 bank. It is a 512-MbitSDRAM organized as 33554432-word × 4-bit × 4 bank. All inputs and outputs are referred to the r...
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