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Description: The HM621664HBI is an asynchronous high speed static RAM organized as 64-kword×

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HM621664HBI General Description


The HM621664HBI is an asynchronous high speed static RAM organized as 64-kword×16-bit. It realize high speed access time (20 ns) with employing 0.8 mm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM621664HBI is packaged in 400-mil 44-pin SOJ for high density surface ounting.

HM621664HBI Maximum Ratings

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to +7.0
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC + 0.5
V
Power dissipation
PT
1.0*2/1.5*3
W
Operating temperature
Topr
40 to +85
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
40 to +85
°C
Notes:
1. VT (min) = 2.5 V for pulse width (under shoot) 10 ns
2. At still air condition
3. At air flow  1.0 m/s

HM621664HBI Features

`  Single 5 V supply: 5 V ± 10%
`  Access time: 20 ns (max)
`  Completely static memory
     - No clock or timing strobe required
`  Equal access and cycle times
`  Directly TTL compatible
     - All inputs and outputs
`  400-mil 44-pin SOJ package
`  Center VCC and VSS type pinout
`  Operating temperature range: 40 to +85°C

HM621664HBI Connection Diagram

HM621664HBI  Connection Diagram

HM621664HBI datasheet

HM621664HBI Series
PDF/DataSheet Download

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