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Part Number: HM621864HB

 

 

 

 

Description: The HM621864HB is an asynchronous high speed static RAM organized as 64-kword ×

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HM621864HB General Description


The HM621864HB is an asynchronous high speed static RAM organized as 64-kword ×18-bit. It realize high speed access time (15/20 ns) with employing 0.8 mm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and
wide bit width configuration, such as cache and buffer memory in system. The HM621864HB is packaged in 400-mil 44-pin SOJ for high density surface unting.

HM621864HB Maximum Ratings

Parameter
Symbol
Value
Unit
Supply voltage relative to VSS
VCC
0.5 to +7.0
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC + 0.5
V
Power dissipation
PT
1.0*2/1.5*3
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
10 to +85
°C
Notes:
1. VT (min) = 2.5 V for pulse width (under shoot) 10 ns
2. At still air condition
3. At air flow 1.0 m/s

HM621864HB Features

`  Single 5 V supply
`  Access time: 15/20 ns (max)
`  Completely static memory
     - No clock or timing strobe required
`  Equal access and cycle times
`  Directly TTL compatible
     - All inputs and outputs
`  400-mil 44-pin SOJ package
`  Center VCC and VSS type pinout

HM621864HB Connection Diagram

HM621864HB  Connection Diagram

HM621864HB datasheet

HM621864HB Series
PDF/DataSheet Download

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