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Part Number: HM624100H

 

 

 

 

Description: The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword ´ 4-bit. It has realized high speed access time...


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HM624100H General Description


The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword ´ 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting.

HM624100H Maximum Ratings

Parameter Symbol Value Unit
Supply voltage relative to VSS VCC 0.5to +7.0 V
Voltage on any pin relative to VSS VT 0.5*2 to VCC + 0.5 V
Power dissipation PT 1.0 W
Operating temperature Topr 0 to +70
Storage temperature Tstg 55 to +125
Storage temperature under bias Tbias 10 to +85

HM624100H Features

·  Single 5.0 V supply : 5.0 V ± 10 %
·  Access time 10/12/15 ns (max)
·  Completely static memory
  - No clock or timing strobe required
·  Equal access and cycle times
·  Directly TTL compatible
  - All inputs and outputs
·  Operating current : 200/180/160 mA (max)
·  TTL standby current : 70/60/50 mA (max)
·  CMOS standby ccurrent : 5 mA (max)
                          : 1.2 mA (max) (L-version)
·  Data retension current : 0.8 mA (max) (L-version)
·  Data retension voltage : 2.0 V (min) (L-version)
·  Center VCC and VSS type pinout

HM624100H Connection Diagram

HM624100H  Connection Diagram

HM624100H datasheet

HM624100H
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