Purchase HM628512BI, In-stock HM628512BI From SeekIC.
Part Number: HM628512BI
Description: The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has...
- Table of contents:
HM628512BI
-
Suppliers
DataSheet
General Description
HM628512BI General Description
The Hitachi HM628512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin DIP.
HM628512BI Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power supply voltage | VCC | 0.5 to +7.0 | V |
| Voltage on any pin relative to VSS | VT | 0.5* 1 to VCC + 0.3* 2 | V |
| Power dissipation | PT | 1.0 | W |
| Operating temperature | Topr | 40 to +85 | |
| Storage temperature | Tstg | 55 to +125 | |
| Storage temperature under bias | Tbias | 40 to +85 |
2. Maximum voltage is 7.0 V
HM628512BI Features
• Single 5 V supply
• Access time: 70/85 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: 40 to +85˚C
• Access time: 70/85 ns (max)
• Power dissipation
Active: 50 mW/MHz (typ)
Standby: 10 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: 40 to +85˚C
HM628512BI Connection Diagram
HM6116
PDF/DataSheet Download
- Datasheet: HM6116
- File Size: 256425 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
- ·HM6116FP-2
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116FP-3
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116FP-4
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116LFP-2
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116LFP-3
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116LFP-4
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116LP-2
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
- ·HM6116LP-3
- HITACHI [Hitachi Semiconductor]
- 2048-word X 8bit High Speed CMOS Static RAM
- 256425 KB
HM628512BI Relative Products
HM628512BFP
The Hitachi HM628512BFP is a 4-Mbit static RAM organized 512-kword×8-bit. It realizes higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It is packaged in standard 32-pin SOP.
HM628512B
The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch w...
HM628512A
The Hitachi HM628512A is a 4-Mbit static RAM organized 512-kword×8-bit. It realizes higher density, higher performance and low power consumption by employing 0.5 mm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or...
HM628512
The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword ×8-bit. It realizes igher density, higher performance and low power consumption by employing 0.5 mm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or ...
HM628511HI
The HM628511HI Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. HM628511HI has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It i...
HM628511HC
The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word ´ 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the...
Hotspot Suppliers Product
87439-0300
Price: 0.02-2 USD
ultra low-profile connector system, SMD, 3Amps, 250Volts, Box-style, wire-to-board
ISL6271ACRZ-T
Price: 2.65-2.75 USD
Integrated XScale Regulator ISL6271ACRZ-T QFN-20
TD61N12KOF
Price: 19-44 USD
Rectifier Diode Module, TD61N12KOF, Infineon Technologies AG, RoHS, 120 A, 1200V
BTS5240G
Price: 1.5-2 USD
IC HIGH SIDE PWR SWITCH PDSO-20 - BTS5240G
TAJA476K006RNJ
Price: 0.05-0.08 USD
Capacitor, SMD, 47 μF, 6.3V, AVX Corporation, TAJA476K006RNJ
SMAZ5V6-13-F
Price: 0.05-0.2 USD
1.0W, surface mount zener diode, SMA, 5.6 V, RoHS Compliant, Green Molding Compound
MCP1702T-5002E/CB
Price: 0.171-0.173 USD
250mA, low quiescent current LDO regulator, SOT23
2SK3482-Z-E1
Price: 1-4 USD
TO252, N-channel, power MOS FET, Low on-state resistance, 18 A, 3600 pF, 4.5 V
EKMM351VSN221MQ35S
Price: 0.01-100 USD
Downsize, longer life, high ripple version, KMH series, Pb-free design, 220μF
MAX479CSD
Price: 3.9-4.1 USD
8-Pin SOP, ±22V, 17μA Max, Dual/Quad, Single-Supply Operation, Precision Op Amp
2222.630.53.221
Price: 0.1-0.2 USD
Capacitors, 100V
AD2S82AJPZ
Price: 125-126 USD
tracking resolver-to-digital converter, PLCC-44, +14 V, Ratiometric Conversion
