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HM62V16258B

Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Fast access time: 70 ns/85 ns (max)• Power dissipation: -Active: 9 mW (typ) -Standby: 3 W (typ)• Completely static memory. -No clock or timing strobe required• Equal access and cycle times• Common data input and o...

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SeekIC No. : 004363540 Detail

HM62V16258B: Features: • Single 3.0 V supply: 2.7 V to 3.6 V• Fast access time: 70 ns/85 ns (max)• Power dissipation: -Active: 9 mW (typ) -Standby: 3 W (typ)• Completely static memory. -N...

HM62V16258B Data Sheet

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Part Number:
HM62V16258B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 70 ns/85 ns (max)
• Power dissipation:
   -Active: 9 mW (typ)
   -Standby: 3 W (typ)
• Completely static memory.
   - No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
   - Three state output
• Battery backup operation.


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Power supply voltage relative to VSS
VCC
−0.5 to +4.6
V
Terminal voltage on any pin relative to VSS
VT
−0.5*1 to VCC + 0.3*2
V
Power dissipation
PT
1.0
W
Storage temperature range
Tstg
−55 to +125
°C
Storage temperature range under bias
Tbias
−10 to +85
°C
Notes:
1. VT min: 3.0 V for pulse half-width 30 ns.
2. Maximum voltage is +4.6 V.


Description

The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word ´ 16-bit. HM62V16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII.




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