HM62V8512CI

Features: * Single 3.0 V supply: 2.7 V to 3.6 V* Access time: 70 ns (max)* Power dissipation Active: 6.0 mW/MHz (typ)Standby: 2.4 W (typ)* Completely static memory. No clock or timing strobe required* Equal access and cycle times* Common data input and output: Three state output* Directly LV-TTL c...

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SeekIC No. : 004363551 Detail

HM62V8512CI: Features: * Single 3.0 V supply: 2.7 V to 3.6 V* Access time: 70 ns (max)* Power dissipation Active: 6.0 mW/MHz (typ)Standby: 2.4 W (typ)* Completely static memory. No clock or timing strobe require...

floor Price/Ceiling Price

Part Number:
HM62V8512CI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

*  Single 3.0 V supply:  2.7 V to 3.6 V
*  Access time:  70 ns (max)
*  Power dissipation
                     Active:  6.0 mW/MHz (typ)
                     Standby:  2.4 W (typ)
*  Completely static memory. No clock or timing strobe required
*  Equal access and cycle times
*  Common data input and output:  Three state output
*  Directly LV-TTL compatible:  All inputs and outputs
*  Battery backup operation
*  Operating temperature:  40 to +85?C



Pinout

  Connection Diagram


Specifications

Parameter Symbol Value Unit
Power supply voltage VCC
0.5 to +4.6 V
Voltage on any pin relative to VSS
VT
1 2
0.5* to V CC+ 0.5*
V
Power dissipation PT
1.0 W
Operating temperature Topr 40 to +85 °C
Storage temperature Tstg 55 to +125 °C
Storage temperature under bias Tbias 40 to +85 °C



Description

The Hitachi HM62V8512CI is a 4-Mbit static RAM organized 512-kword ·  8-bit.  HM62V8512CI Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).  The  Series offers low power standby powerdissipation; therefore, it is suitable for battery backup systems.  It is packaged in standard 32-pin TSOP II.


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