HM62W1664H

Features:

`  Single 3.3 V supply: 3.3 V ± 0.3 V
`  Access time 30/35/45 ns (max)
`  Completely static memory
     - No clock or timing strobe required
`  Equal access and cycle times
`  Directly CMOS compatible
     - All inputs and outputs
`  400-mil 44-pin SOJ
`  Center V_CC and V_SS type pinout


Pinout




Specifications

Parameter	Symbol	Value	Unit
Supply voltage relative to VSS	VCC	0.5 to + 4.6	V
Voltage on any pin relative to VSS	VT	0.5*1 to VCC+0.5	V
Power dissipation	PT	1.0	W
Operating temperature	Topr	0 to +70	°C
Storage temperature	Tstg	55 to +125	°C
Storage temperature under bias	Tbias	10 to + 85	°C

Notes:
1. V_T min = 2.5 V for pulse width (under shoot)h 10 ns



Description

The HM62W1664H is an asynchronous 3.3 V operation high speed static RAM organized as 64-kword*16- bit. It realizes high speed access time (30/35/45 ns) with employing 0.8 m CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W1664H is packaged in 400-mil 44-pin SOJ for high density surface mounting.