HM62W4100HJP-10

The HM62W4100HJP-10 is one member of the HM62W4100H family which is designed as the asyncronous high speed static RAM that organized as 1-Mword ´ 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 mm CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

Features of the HM62W4100HJP-10 are:(1)Single supply : 3.3 V ?0.3 V; (2)Access time 10 ns/12 ns/15 ns (max); (3)Completely static memory; (4)No clock or timing strobe required; (5)Equal access and cycle times; (6)Directly TTL compatible; (7)All inputs and outputs; (8)400-mil 32-pin SOJ package; (9)Center VCC and VSS type pinout.

The absolute maximum ratings of the HM62W4100HJP-10 can be summarized as:(1)Supply voltage relative to VSS: 0.5 to +4.6 V;(2)Voltage on any pin relative to VSS: 0.5 to VCC+0.5 V;(3)Power dissipation: 1.0 W;(4)Operating temperature: 0 to +70 °C;(5)Storage temperature: 55 to +125 °C;(6)Storage temperature under bias:10 to +85 °C. If you want to know more information such as the electrical characteristics about the HM62W4100HJP-10, please download the datasheet in www.seekic.com or www.chinaicmart.com.