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Part Number: HM62W8512B
Description: The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher de...
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HM62W8512B
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DataSheet
General Description
HM62W8512B General Description
The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density,higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62W8512B is suitable for battery backup system.
HM62W8512B Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power supply voltage | VCC | 0.5 to +4.6 | V |
| Voltage on any pin relative to VSS | VT | 0.5* 1 to VCC + 0.5* 2 | V |
| Power dissipation | PT | 1.0 | W |
| Operating temperature | Topr | 20 to +70 | |
| Storage temperature | Tstg | 55 to +125 | |
| Storage temperature under bias | Tbias | 20 to +85 |
2. Maximum voltage is 4.6 V
HM62W8512B Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 55/70 ns (max)
• Power dissipation
Active: 16.5 mW/MHz (typ)
Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
• Access time: 55/70 ns (max)
• Power dissipation
Active: 16.5 mW/MHz (typ)
Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
HM62W8512B Connection Diagram
HM62W8512B
PDF/DataSheet Download
- Datasheet: HM62W8512B
- File Size: 87741 KB
- Manufacturer: HITACHI [Hitachi Semiconductor]
- Click here to Download
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