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Description: The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword ×8-bit. H...


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HM62W8512BI General Description


The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process echnology. The  M62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.

HM62W8512BI Maximum Ratings

Parameter
Symbol
Value
Unit
Power supply voltage
VCC
0.5 to +4.6
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC + 0.5*2
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
40 to +85
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
40 to +85
°C
Notes: 1. 3.0 V for pulse half-width 30 ns
2. Maximum voltage is 4.6 V

HM62W8512BI Features

`  Single 3.3 V supply: 3.3 V ± 0.3V
`  Access time: 70/85 ns (max)
`  Power dissipation
- Active: 16.5 mW/MHz (typ)
- Standby: 3.3 mW (typ)
`  Completely static memory. No clock or timing strobe required
`  Equal access and cycle times
`  Common data input and output: Three state output
`  Directly LV-TTL compatible: All inputs and outputs
`  Battery backup operation
`  Operating temperature: 40 to +85°C

HM62W8512BI Connection Diagram

HM62W8512BI  Connection Diagram

HM62W8512BI datasheet

HM62W8512BI
PDF/DataSheet Download

  • Datasheet: HM62W8512BI
  • File Size: 66103 KB
  • Manufacturer: HITACHI [Hitachi Semiconductor]
  • Click here to Download

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