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HM62W8512BI

Features: ` Single 3.3 V supply: 3.3 V ± 0.3V` Access time: 70/85 ns (max)` Power dissipation-Active: 16.5 mW/MHz (typ)-Standby: 3.3 mW (typ)` Completely static memory. No clock or timing strobe required` Equal access and cycle times` Common data input and output: Three state output` Directly LV-T...

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SeekIC No. : 004363577 Detail

HM62W8512BI: Features: ` Single 3.3 V supply: 3.3 V ± 0.3V` Access time: 70/85 ns (max)` Power dissipation-Active: 16.5 mW/MHz (typ)-Standby: 3.3 mW (typ)` Completely static memory. No clock or timing strobe req...

HM62W8512BI Data Sheet

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Part Number:
HM62W8512BI
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Single 3.3 V supply: 3.3 V ± 0.3V
`  Access time: 70/85 ns (max)
`  Power dissipation
- Active: 16.5 mW/MHz (typ)
- Standby: 3.3 mW (typ)
`  Completely static memory. No clock or timing strobe required
`  Equal access and cycle times
`  Common data input and output: Three state output
`  Directly LV-TTL compatible: All inputs and outputs
`  Battery backup operation
`  Operating temperature: 40 to +85°C


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Power supply voltage
VCC
0.5 to +4.6
V
Voltage on any pin relative to VSS
VT
0.5*1 to VCC + 0.5*2
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
40 to +85
°C
Storage temperature
Tstg
55 to +125
°C
Storage temperature under bias
Tbias
40 to +85
°C
Notes: 1. 3.0 V for pulse half-width 30 ns
2. Maximum voltage is 4.6 V


Description

The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword ×8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process echnology. The  M62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.




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