HM65764

The HM65764 is designed as a high  speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology.

HM65764 has eight features. The first one is fast access time would be 15/20/25/35/45/55 ns max for commercial and 20/25/35/45/55 ns max for industrial / automotive / military. The second one is low power consumption which would be typ 380mW for active and typ 110mW for standby. The third one is wide temperature range would be from -55°C to 125°C. The fourth one is 300 and 600 mils width package. The fifth one is TTL compatible inputs and outputs. The sixth one is asynchronous. The seventh one is capable of withstanding greater than 2000V electrostatic discharge. The eighth one is single 5V supply. That are all the main features.

Some electrical characteristics of HM65764 have been concluded into several points as follow. The first one is about its supply voltage to GND potential which would be from -0.5v to +7.0V. The second one is about its DC input voltage which would be from -3.0V to +7.0V. The third one is about its DC output voltage in high Z state which would be from -0.5v to +7.0V. The fourth one is about its storage temperature range which would be from -65°C to +150°C. The fifth one is about its output current into outputs (low) which would be 20mA. The sixth one is about its electro static dischatge voltage which would e larger than 2000V.

Also some recommended DC operating conditions about it. The first one is about its supply voltage which should be min 4.5V and typ 5.0V and max 5.5V. The second one is about its ground which should be 0.0V. The third one is about its input low voltage which should be min -3.0V and typ 0.0V and max 0.8V. The fourth one is about its input high voltage which should be min 2.2V and max Vcc. And so on. For more information please contact us.