Features: Passive Double Balanced TopologyHigh LO to RF Isolation: 30 dBLow Conversion Loss: 8 dBWide IF Bandwidth: DC - 5 GHzDie Size: 0.9 x 1.0 x 0.1 mmApplicationThis HMC-MDB169 is ideal for:• Short Haul / High Capacity Radios• Point-to-Multi-Point Equipment• Military Radar, E...
HMC-MDB169: Features: Passive Double Balanced TopologyHigh LO to RF Isolation: 30 dBLow Conversion Loss: 8 dBWide IF Bandwidth: DC - 5 GHzDie Size: 0.9 x 1.0 x 0.1 mmApplicationThis HMC-MDB169 is ideal for:R...
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Features: ·Output IP3: +25 dBm·P1dB: +16 dBm·Gain: 13 dB·Supply Voltage: +5 V·50 Ohm Matched Input...
Features: Output IP3: +25 dBmP1dB: +17 dBmGain: 24 dBSupply Voltage: +5 V50 Ohm Matched Input/Outp...
Features: Noise Figure: 2.5 dBGain: 11.6 dB @ 10 GHzP1dB Output Power: +10 dBmSupply Voltage: +2V ...
LO Drive | 20 dBm |
Storage Temperature | -65 to 150 |
Operating Temperature | -55 to 85 |
The HMC-MDB169 is a passive Double Balanced MMIC Mixer which utilizes GaAs Heterojunction Bipolar Transistor (HBT) Shottky diode technology and can be used as either an upconverter or a downconverter. This compact mixer features wide IF bandwidth, low conversion loss and high LO to RF and LO to IF isolation. All bond pads and the die backside are Ti/Au metallized and the Shottky devices are fully passivated for reliable operation. The HMC-MDB169 Double Balanced Mixer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. This compact MMIC is a much smaller and more consistent alternative to hybrid style double balanced mixer assemblies. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.