Features: Excellent Noise Figure: 2.0 dBGain: 22 dBSingle Supply : +3V @ 58 mASmall Size: 1.33 mm x 2.48 mmApplicationThe HMC263 is ideal for:• Millimeterwave Point-to-Point Radios• LMDS• VSAT• SATCOMSpecifications Drain Bias Voltage (Vdd1, Vdd2) ...
HMC263: Features: Excellent Noise Figure: 2.0 dBGain: 22 dBSingle Supply : +3V @ 58 mASmall Size: 1.33 mm x 2.48 mmApplicationThe HMC263 is ideal for:• Millimeterwave Point-to-Point Radios• LMDS...
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Drain Bias Voltage (Vdd1, Vdd2) | +5.5 Vdc |
RF Input Power (RFin)(Vdd = +3.0 Vdc) | -5 dBm |
Channel Temperature | 175 °C |
Continuous Pdiss (T = 85 °C) (derate 7.69 mW/°C above 85 °C) |
0.692 W |
Thermal Resistance (channel to lead) |
130 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -55 to +85 °C |
The HMC263 chip is a GaAs MMIC Low Noise Amplifi er (LNA) which covers the frequency range of 24 to 36 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (3.29 mm2) size. The chip utilizes a GaAs PHEMT process offering 22 dB gain from a single bias supply of + 3V @ 58 mA with a noise fi gure of 2.0 dB. All data is with the chip in a 50 ohm test fi xture connected via 0.076 mm (3 mil) diameter ribbon bonds of minimal length 0.31 mm (<12 mils). The HMC263 may be used in conjunction with HMC259, HMC264, or HMC265 mixers to realize a millimeterwave system receiver.