Features: Psat Output Power: +24 dBmOutput IP3: +38 dBmHigh Gain: 18 dBSingle Supply: +3.6VUltra Small Package: MSOP8GApplicationThe HMC280MS8G is ideal for:• UNII & HiperLAN• ISMPinoutSpecifications Drain Bias Voltage (Vdd1, Vdd2) +8.0 Vdc ...
HMC280MS8G: Features: Psat Output Power: +24 dBmOutput IP3: +38 dBmHigh Gain: 18 dBSingle Supply: +3.6VUltra Small Package: MSOP8GApplicationThe HMC280MS8G is ideal for:• UNII & HiperLAN• ISMPin...
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Drain Bias Voltage (Vdd1, Vdd2) | +8.0 Vdc |
RF Input Power (RFin)(Vdd = +5.0 Vdc) | +20 dBm |
Channel Temperature | 150 °C |
Continuous Pdiss (T = 85 °C) (derate 41 mW/°C above 85 °C) |
2.67 W |
Thermal Resistance (channel to lead) |
24.3 °C/W |
Storage Temperature | -65 to +150 °C |
Operating Temperature | -55 to +85 °C |
The HMC280MS8G is a +3.6V GaAs MMIC power amplifi er covering 5 to 6 GHz. The HMC280MS8G is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The amplifi er provides 18 dB of gain and 24 dBm Psat while operating from a single positive supply. External component requirements are minimal with the amplifi er occupying less than 0.023 sq. in. (14.6 sq. mm). All data is taken with the amplifi er assembled into a 50 ohm test fi xture with the exposed base paddle connected to RF ground. For transmit / receive applications use with either the HMC223MS8 or HMC224MS8 SPDT switches.