HMC308E

Series: -
Test Frequency: -
Packaging: Tape & Reel (TR)Alternate Packaging
Voltage - Supply: 5V
Frequency: 800MHz ~ 3.8GHz
RF Type: General Purpose
Gain: 13dB
P1dB: 12dBm
Manufacturer: Hittite Microwave Corporation
Noise Figure: 7dB
Current - Supply: 53mA
Package / Case: SOT-23-6


Features:

Gain: 18 dB
P1dB Output Power: +17 dBm@ +5V
Single Supply: +3V or +5V
No External Components
Integrated DC Blocks
Ultra Small Package: SOT26


Application

• Cellular/PCS/3G
• Fixed Wireless & Telematics
• Cable Modem Termination Systems
• WLAN, Bluetooth & RFID


Specifications

Drain Bias Voltage (Vdd)	+7.0 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc)	+10 dBm
Channel Temperature	150
Continuous Pdiss (T = 85 ) (derate 6.25 mW/ above 85 )	0.406 W
Thermal Resistance (channel to lead)	160 /W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85
ESD Sensitivity (HBM)	Class 1A

Description

The HMC308 & HMC308E are low cost MESFET MMIC amplifi ers that operate from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifi er can be used as a broadband amplifi er stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC308 & HMC308E offers 18 dB of gain and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifi er is ideal as a driver amplifi er for transmitters or for use as a local oscillator (LO) amplifi er to increase drive levels for passive mixers. The amplifi er occupies 0.014 in2 (9 mm2), making it ideal for compact radio designs.