HMC311LP3

Features:

P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O's
3 x 3 x 1 mm QFN SMT Package


Application

The HMC311LP3 is an ideal RF/IF gain block or LO buffer amplifi er for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio


Specifications

Collector Bias Voltage (Vcc)	+7.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)	+10 dBm
Junction Temperature	150 °C
Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C)	0.339 W
Thermal Resistance (junction to ground paddle)	192 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

Description

The HMC311LP3 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi er. This 3x3mm QFN packaged amplifi er can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3 offers 14.5 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.