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HMC313E

Features: `P1dB Output Power: +14 dBm`Output IP3: +27 dBm`Gain: 17 dB`Single Supply: +5V`High Reliability GaAs HBT Process`Ultra Small Package: SOT26`Included in the HMC-DK001 Designer's KitApplicationIdeal as a Driver & Amplifi er for:• 2.2 - 2.7 GHz MMDS• 3.5 GHz Wireless Local L...

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SeekIC No. : 004363856 Detail

HMC313E: Features: `P1dB Output Power: +14 dBm`Output IP3: +27 dBm`Gain: 17 dB`Single Supply: +5V`High Reliability GaAs HBT Process`Ultra Small Package: SOT26`Included in the HMC-DK001 Designer's KitApplicat...

HMC313E Data Sheet

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Part Number:
HMC313E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`P1dB Output Power: +14 dBm
`Output IP3: +27 dBm
`Gain: 17 dB
`Single Supply: +5V
`High Reliability GaAs HBT Process
`Ultra Small Package: SOT26
`Included in the HMC-DK001 Designer's Kit


Application

Ideal as a Driver & Amplifi er for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5.0 - 6.0 GHz UNII & HiperLAN


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +5.5 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc) +20 dBm
Junction Temperature 150
Continuous Pdiss (T = 85)
(derate 3.99 mW/ above 85)		 0.259 W
Thermal Resistance(junction to lead) 251/W
Storage Temperature -65 to +150
Operating Temperature -40 to +85
ESD Sensitivity (HBM) Class 1A



Description

The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi ers that operate from a single Vcc supply. The surface mount SOT26 amplifi er can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313 & HMC313E offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current.




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