HMC314

Features:

·P1dB Output Power: +18 dBm
·Output IP3: +29 dBm
·Gain: 12 dB
·Single Supply: 5V
·Ultra Small Package: SOT26


Application

Ideal Broadband Gain Stage for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• Low Profi le Portable Wireless Devices
• WLAN Systems


Pinout




Specifications

Collector Bias Voltage (Vcc)	+5.5 Vdc
Control Voltage Range (Vpd)	-0.2 to 3.5 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 65) (derate 6.57 mW/ above 65)	0.558 W
Thermal Resistance (junction to paddle)	152/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +65

Description

The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifi er that operates from a single positive supply. This amplifi er also incorporates a power down feature. When the "Vpd" pin is held low, the amplifi er will shut down. The surface mount SOT26 amplifi er can be used as a broadband gain stage for wideband applications. The amplifi er provides 12 dB of gain and +22 dBm of saturated power while operating from a single positive +5v supply. The HMC314 is packaged in an ultra small SOT26 package at a height of only 1.45mm.