HMC326MS8G

Features:

·Psat Output Power: +26 dBm
·> 40% PAE
·Output IP3: +36 dBm
·High Gain: 21 dB
·Vs: +5.0V
·Ultra Small Package: MSOP8G


Application

The HMC326MS8G is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifi er


Pinout




Specifications

Collector Bias Voltage (Vcc)	+5.5 Vdc
Control Voltage Range (Vpd)	+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)	+20 dBm
Junction Temperature	150
Continuous Pdiss (T = 85) (derate 11.49 mW/ above 85)	0.747 W
Thermal Resistance (junction to ground paddle)	87/W
Storage Temperature	-65 to +150
Operating Temperature	-40 to +85

Description

The HMC326MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifi er which operates between 3.0 and 4.5 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The HMC326MS8G amplifi er provides 21 dB of gain and +26 dBm of saturated power from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.