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HMC327MS8G

Features: Gain: 21 dBSaturated Power: +30 dBm45% PAESupply Voltage: +5.0 VPower Down CapabilityLow External Part CountApplicationThis amplifi er is ideal for use as a poweramplifi er for 3.3 - 3.6 GHz applications:• Wireless Local LoopPinoutSpecifications Collector B...

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SeekIC No. : 004363873 Detail

HMC327MS8G: Features: Gain: 21 dBSaturated Power: +30 dBm45% PAESupply Voltage: +5.0 VPower Down CapabilityLow External Part CountApplicationThis amplifi er is ideal for use as a poweramplifi er for 3.3 - 3.6 G...

HMC327MS8G Data Sheet

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Part Number:
HMC327MS8G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count


Application

This amplifi er is ideal for use as a power
amplifi er for 3.3 - 3.6 GHz applications:
• Wireless Local Loop


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +5.5 Vdc
Control Voltage (Vpd) +5.5 Vdc
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc) +20 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)		 1.88 W
Thermal Resistance
(junction to ground paddle)		 34 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C



Description

The HMC327MS8G is a high effi ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi er which operates between 3.0 and 4.0 GHz. The HMC327MS8G amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.




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