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HMC327MS8GE

Features: ·Gain: 21 dB·Saturated Power: +30 dBm·45% PAE·Supply Voltage: +5.0 V·Power Down Capability·Low External Part CountApplication• Wireless Local LoopPinoutSpecifications Collector Bias Voltage (Vcc) +6.0 Vdc Control Voltage (Vpd) +5.5 Vdc RF Input Power (RFin)(Vcc = +2.4...

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SeekIC No. : 004363874 Detail

HMC327MS8GE: Features: ·Gain: 21 dB·Saturated Power: +30 dBm·45% PAE·Supply Voltage: +5.0 V·Power Down Capability·Low External Part CountApplication• Wireless Local LoopPinoutSpecifications Collector ...

HMC327MS8GE Data Sheet

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Part Number:
HMC327MS8GE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Gain: 21 dB
·Saturated Power: +30 dBm
·45% PAE
·Supply Voltage: +5.0 V
·Power Down Capability
·Low External Part Count


Application

• Wireless Local Loop


Pinout

Connection Diagram


Specifications

Collector Bias Voltage (Vcc) +6.0 Vdc
Control Voltage (Vpd) +5.5 Vdc
RF Input Power (RFin)(Vcc = +2.4 Vdc) +16dBm
Junction Temperature 150
Continuous Pdiss (T = 85 )
(derate 9 mW/ above 85 )		 1.88 W
Thermal Resistance
(junction to lead)		 34/W
Storage Temperature -65 to +150
Operating Temperature -40 to +85



Description

The HMC327MS8G & HMC327MS8GE are high effi - ciency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifi ers which operate between 3.0 and 4.0 GHz. The HMC327MS8G & HMC327MS8GE  amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifi er provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage. Power down capability is available to conserve current consumption when the amplifi er is not in use.

 




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