HMC349MS8GE

Series: -
Packaging: Cut Tape (CT)Alternate Packaging
Features: SPDT
RF Type: General Purpose
Frequency: 0Hz ~ 4GHz
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Manufacturer: Hittite Microwave Corporation
Supplier Device Package: 8-MSOP-EP


Features:

High Isolation: 70 dB @ 1 GHz
57 dB @ 2 GHz
Single Positive Control: 0/+5V
+52 dBm Input IP3
Non-Refl ective Design
All Off State
Ultra Small MS8G SMT Package: 14.8 mm2
Included in the HMC-DK005 Designer's Kit


Application

The HMC349MS8G / HMC349MS8GE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
• CATV/CMTS
• Test Instrumentation


Pinout




Specifications

RF Input Power (Vctl = 0V/+5V) (0.25 - 4 GHz) Supply Voltage Range (Vdd) Control Voltage Range (Vctl) Hot Switch Power Level (Vdd = +5V) Channel Temperature Continuous Pdiss (T = 85 ) (derate 12 mW/°C above 85) Thermal Resistance Storage Temperature Operating Temperature ESD Sensitivity (HBM)

+30 dBm (T = +85) +7 Vdc -1V to Vdd +1V +30 dBm 150 0.75 W 87 /W -65 to +150 -40 to +85 Class 1A

Description

The HMC349MS8G & HMC349MS8GE are high isolation non-refl ective DC to 4 GHz GaAs MESFET SPDT switches in low cost 8 lead MSOP8G surface mount packages with exposed ground paddles. The HMC349MS8G & HMC349MS8GE  switch is ideal for cellular/PCS/3G basestation applications yielding 50 to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an "all off" state.