HMC375LP3

Features:

Noise Figure: 0.9 dB
+34 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 136 mA
50 Ohm Matched Output


Application

The HMC375LP3 is ideal for basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• DECT


Pinout




Specifications

Drain Bias Voltage (Vdd)	+8.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc)	+15 dBm
Channel Temperature	150 °C
Continuous Pdiss (T= 85 °C) (derate 15.6 mW/°C above 85 °C)	1.015 W
Thermal Resistance (channel to die bottom)	64.1 °C/W
Storage Temperature	-65 to +150 °C
Operating Temperature	-40 to +85 °C

Description

The HMC375LP3 high dynamic range GaAs PHEMT MMIC Low Noise Amplifi er is ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise fi gure, 17 dB gain and +33 dBm output IP3 from a single supply of +5.0V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. The HMC375LP3 shares the same package with the HMC356LP3 and HMC372LP3 high IP3 LNAs. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.