HMC470LP3 General Description
HMC470LP3 Maximum Ratings
RF Input Power (DC - 3.0 GHz) +27 dBm (T = +85 )
Control Voltage Range (V1 to V5) -1V to Vdd +1V
Bias Voltage (Vdd) +7.0 Vdc
Channel Temperature 150
Continuous Pdiss (T = 85 ) 0.5 W
(derate 7.7 mW/°C above 85 )
Thermal Resistance 130 /W
Storage Temperature -65 to +150
Operating Temperature -40 to +85
HMC470LP3 Features
1 dB LSB Steps to 31 dB
Single Control Line Per Bit
TTL/CMOS Compatible Control
+/- 0.3 dB Typical Step Error
Single +5V Supply
3 x 3 mm SMT Package
Included in the HMC-DK004 Designer's Kit
HMC470LP3 Typical Application
The HMC470LP3 /HMC470LP3E is ideal for both RF and IF applications:
• Cellular; UMTS/3G Infrastructure
• ISM, MMDS, WLAN, WiMAX
• Microwave Radio & VSAT
• Test Equipment and Sensors
HMC470LP3 Connection Diagram
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