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MFG:HITTITE D/C:07+
Part Number: HMC475ST89
MFG: HITTITE
D/C: 07+
Description: The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er co...
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HMC475ST89
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DataSheet
General Description
HMC475ST89 General Description
The HMC475ST89(E) is a InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4.5 GHz. Packaged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +25 dBm output power. The HMC475ST89(E) offers 21.5 dB of gain and +35 dBm output IP3 at 850 MHz while requiring only 110 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
HMC475ST89 Maximum Ratings
| Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.2 Vdc) Junction Temperature |
+8.0 Vdc +17 dBm 150 |
| Continuous Pdiss (T = 85 ) (derate 16.86 mW/ above 85 ) |
1.09 W |
| Thermal Resistance (junction to lead) |
59.3 /W |
| Storage Temperature Operating Temperature |
-65 to +150 -40 to +85 |
HMC475ST89 Features
·P1dB Output Power: +22 dBm
·Gain: 21.5 dB
·Output IP3: +35 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +8V to +12V
·Industry Standard SOT89 Package
·Gain: 21.5 dB
·Output IP3: +35 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +8V to +12V
·Industry Standard SOT89 Package
HMC475ST89 Typical Application
The HMC475ST89 / HMC475ST89E is an ideal RF/IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
HMC1001
PDF/DataSheet Download
- Datasheet: HMC1001
- File Size: 236544 KB
- Manufacturer:
- Click here to Download
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HMC475ST89 Relative Products
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