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Description: The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers co...


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HMC476SC70E General Description


The HMC476SC70(E) is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 6 GHz. This industry standard SC70 packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +12 dBm output power. The HMC476SC70(E) offers 20 dB of gain with a +24 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.

HMC476SC70E Maximum Ratings

Collector Bias Voltage (Vcc) +6.0 Vdc
Collector Bias Current (Icc) 45 mA
RF Input Power (RFin)(Vcc = +2.4 Vdc) +5 dBm
Junction Temperature 150
Continuous Pdiss (T = 85 )
(derate 9 mW/ above 85 )
0.504 W
Thermal Resistance
(junction to lead)
129/W
Storage Temperature -65 to +150
Operating Temperature -40 to +85

HMC476SC70E Features

·P1dB Output Power: +12 dBm
·Gain: 20 dB
·Output IP3: +24 dBm
·Cascadable 50 Ohm I/Os
·Single Supply: +5V to +12V
·Industry Standard SC70 Package

HMC476SC70E Typical Application

The HMC476SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment

HMC476SC70E Connection Diagram

HMC476SC70E  Connection Diagram

HMC476SC70E datasheet

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