Features: 10 dB Conversion GainImage Rejection: 17 dB2 LO to RF Isolation: 35 dBNoise Figure: 3 dBInput IP3: +3 dBmDie Size: 2.33mm x 2.73mm x 0.10mmApplicationThe HMC570 is ideal for:• Point-to-Point and Point-to-Multi-Point Radio• Military Radar, EW & ELINT• Satellite Commu...
HMC570: Features: 10 dB Conversion GainImage Rejection: 17 dB2 LO to RF Isolation: 35 dBNoise Figure: 3 dBInput IP3: +3 dBmDie Size: 2.33mm x 2.73mm x 0.10mmApplicationThe HMC570 is ideal for:• Point-...
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Features: ·360° of Continuous Phase Control·40 dB of Continuous Gain Control·-162 dBm/Hz Output No...
| RF | +2 dBm |
| LO Drive | + 13 dBm |
| Vdd | 5.5V |
| Channel Temperature | 175 |
| Continuous Pdiss (T=85) (derate 10.2 mW/ above 85) |
920 mW |
| Thermal Resistance (RTH) (channel to package bottom) |
98.3/W |
| Storage Temperature | -65 to +150 |
| Operating Temperature | -55 to +85 |
The HMC570 is a compact GaAs MMIC I/Q downconverter chip which provides a small signal conversion gain of 10 dB with a noise fi gure of 3 dB and 17 dB of image rejection across the frequency band. The device utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a fi lter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90° hybrid is needed to select the required sideband. All data shown below is taken with the chip mounted in a 50 Ohm test fi xture and includes the effects of 1 mil diameter x 20 mil length bond wires on each port. HMC570 is a much smaller alternative to hybrid style image reject mixer downconverter assemblies.