HMC757

The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifi er which operates between 16 and 24 GHz. It provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip- Modules (MCMs).

The features of HMC757 are as follows: (1)Saturated Output Power: +30 dBm @ 30% PAE; (2)High Output IP3: +37 dBm; (3)High Gain: 22 dB; (4)DC Supply: +7V @ 395 mA; (5)50 Ohm Matched Input/Output; (6)Die Size: 2.4 x 0.9 x 0.1 mm.

The electrical characteristics of the HMC757 are: (1)Frequency Range: 20 - 24 GHz; (2)Gain: 24 dB; (3)Gain Variation Over Temperature: 0.032 dB/ °C; (4)Input Return Loss: 12 dB; (5)Output Return Loss: 13 dB; (6)Output Power for 1 dB Compression (P1dB): 29.5 dBm; (7)Saturated Output Power (Psat): 30 dBm; (8)Output Third Order Intercept (IP3): 36 dBm; (9)Total Supply Current (Idd): 395 mA.