HMC816LP4E

The HMC816LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifi er that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise fi gure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V.

The features of HMC816LP4E are as follows: (1)Low Noise Figure: 0.5 dB; (2)High Gain: 22 dB; (3)High Output IP3: +37 dBm; (4)Single Supply: +3V to +5V; (5)50 Ohm Matched Input/Output; (6)24 Lead 4x4mm QFN Package: 16 mm2.

The electrical characteristics of the HMC816LP4E are: (1)Frequency Range: 450 - 660 MHz; (2)Gain: 19 dB; (3)Gain Variation Over Temperature: 0.007 dB/ °C; (4)Noise Figure: 0.5 dB; (5)Input Return Loss: 16 dB; (6)Output Return Loss: 10 dB; (7)Output Power for 1 dB Compression (P1dB): 21 dBm; (8)Saturated Output Power (Psat): 21 dBm; (9)Output Third Order Intercept (IP3: 37 dBm; (10)Supply Current (Idd): 97 mA.