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HMS1M32M8V

Features: · Part identification- HMS1M32M8V : SIMM design- HMS1M32Z8V : ZIP design® Pin-Compatible with the HMS1M32M8V· Fast access times : 10, 12ns and 15ns· High-density 4MByte design· High-reliability high-speed design· Single + 3.3V ±0.3V power supply· Easy memory expansion /CE and /OE fun...

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SeekIC No. : 004364815 Detail

HMS1M32M8V: Features: · Part identification- HMS1M32M8V : SIMM design- HMS1M32Z8V : ZIP design® Pin-Compatible with the HMS1M32M8V· Fast access times : 10, 12ns and 15ns· High-density 4MByte design· High-re...

HMS1M32M8V Data Sheet

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Part Number:
HMS1M32M8V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

· Part identification
- HMS1M32M8V : SIMM design
- HMS1M32Z8V : ZIP design
® Pin-Compatible with the HMS1M32M8V
· Fast access times : 10, 12ns and 15ns
· High-density 4MByte design
· High-reliability high-speed design
· Single + 3.3V ±0.3V power supply
· Easy memory expansion /CE and /OE functions
· All inputs and outputs are LVTTL-compatible
· Industry-standard pinout
· FR4-PCB design
· Low power Dissipation




Pinout






Specifications

PARAMETER SYMBOL RATING
Voltage on Any Pin Relative to Vss VIN,OUT -0.5V to +4.6V
Voltage on Vcc Supply Relative to Vss VCC -0.5V to +4.6V
Power Dissipation PD 8W
Storage Temperature TSTG -65°C to +150°C
Operating Temperature TA 0°C to +70°C





Description

The HMS1M32M8V is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board.

PD0 to PD3 identify the module HMS1M32M8V's density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output.

Data is written into the SRAM memory HMS1M32M8V when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.

For reliability, this SRAM module HMS1M32M8V is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible.






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