HN1A01FE

Application·Small package (Dual type)·High voltage and high current : VCEO = −50V, IC = −150mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)Specifications Characteristic Symbol Rating Unit Collector-base...

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SeekIC No. : 004364920 Detail

HN1A01FE: Application·Small package (Dual type)·High voltage and high current : VCEO = −50V, IC = −150mA (max)·High hFE: hFE = 120~400·Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC =...

floor Price/Ceiling Price

Part Number:
HN1A01FE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Application

·Small package (Dual type)
·High voltage and high current
             : VCEO = −50V, IC = −150mA (max)
·High hFE: hFE = 120~400
·Excellent hFE linearity
             : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)



Specifications

Characteristic Symbol Rating Unit
Collector-base voltage VCBO -50 V
Collector-emitter voltage VCEO -50 V
Emitter-base voltage VEBO -5 V
Collector current IC -150 mA
Base current IB -30 mA
Collector power dissipation PC* 100 mW
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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