HN1A01FU

·􀁺 Small package (Dual type)
·􀁺 High voltage and high current
: V_CEO =−50V, I_C =−150mA (max)
·􀁺 High hFE: h_FE = 120~400
·􀁺 Excellent hFE linearity
: h_FE (I_C =−0.1mA) / h_FE (I_C =−2mA) = 0.95 (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

* Total rating