Purchase HN1D02FU, In-stock HN1D02FU From SeekIC.
MFG:TOSHIBA Package Cooled:SOT-363 D/C:05+
- Table of contents:
HN1D02FU
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DataSheet
General Description
HN1D02FU Maximum Ratings
| Parameter |
Symbol |
Limits |
Unit |
| Maximum (peak) reverse Voltage |
VRM |
85 |
V |
| Reverse voltage |
VR |
80 |
V |
| Maximum (peak) forward current |
IFM |
300* |
mA |
| Average forward current |
Io |
100* |
mA |
| Surge current (10ms) |
IFSM |
2* |
mA |
| Power dissipation |
P |
200 |
mW |
| Junction temperature |
Tj |
125 |
|
| Storage temperature |
Tstg |
−55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability est report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one.
HN1D02FU Features
HN1D02FU is composed of 2 unit of cathode common.
Low forward voltage : VF (3) = 0.90V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
Low forward voltage : VF (3) = 0.90V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance : CT = 0.9pF (typ.)
HN1D02FU
PDF/DataSheet Download
- Datasheet: HN1D02FU
- File Size: 133078 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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