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HN29W25611T

Features: ` On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V` Organization - AND Flash Memory: (2048 + 64) bytesX (More than 16,057 sectors) - Data register: (2048 + 64) bytes` Multi-level memory cell - 2 bit/per memory cell` Automatic programming - Sector program time: 3.0 ms (typ) - Syste...

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SeekIC No. : 004364996 Detail

HN29W25611T: Features: ` On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V` Organization - AND Flash Memory: (2048 + 64) bytesX (More than 16,057 sectors) - Data register: (2048 + 64) bytes` Multi-level me...

HN29W25611T Data Sheet

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Part Number:
HN29W25611T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
`  Organization
    - AND Flash Memory: (2048 + 64) bytesX (More than 16,057 sectors)
    - Data register: (2048 + 64) bytes
`  Multi-level memory cell
    - 2 bit/per memory cell
`  Automatic programming
    - Sector program time: 3.0 ms (typ)
    - System bus free
    - Address, data latch function
    - Internal automatic program verify function
    - Status data polling function
`  Automatic erase
    - Single sector erase time: 1.5 ms (typ)
    - System bus free
    - Internal automatic erase verify function
    - Status data polling function
`  Erase mode
    - Single sector erase ((2048 + 64) byte unit)
`  Fast serial read access time:
    - First access time: 50 ms (max)
    - Serial access time: 50 ns (max)
`  Low power dissipation:
    - ICC2 = 50 mA (max) (Read)
    - ISB2 = 50 mA (max) (Standby)
    - ICC3/ICC4 = 40 mA (max) (Erase/Program)
    - ISB3 = 5 mA (max) (Deep standby)
`  The following architecture is required for data reliability.
    - Error correction: more than 3-bit error correction per each sector read
    - Spare sectors: 1.8% (290 sectors) within usable sectors


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Notes
VCC voltage
VCC
0.6 to +7
V
1
VSS voltage
VSS
0
V
All input and output voltages
Vin, Vout
0.6 to 7
V
1,2
Operating temperature range
Topr
0 to +70
Storage temperature range
Tstg
65 to +125
3
Storage temperature under bias
Tbias
10 to +80



Description

The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611T are more than 16,057 (98% of all sector address) and less than 16,384 sectors.




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